DMN63D8LW-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
| Кількість | Ціна |
|---|---|
| 10000+ | 1.92 грн |
| 20000+ | 1.63 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN63D8LW-13 Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V.
Інші пропозиції DMN63D8LW-13 за ціною від 1.55 грн до 17.56 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN63D8LW-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 380MA SOT323 Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 143628 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
DMN63D8LW-13 | Diodes Incorporated |
MOSFETs 30V N-Ch Enh FET 20Vgss 300mA 1.2A |
на замовлення 56452 шт: термін постачання 21-30 дні (днів) |
|
| DMN63D8LW-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 380MA SOT323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 143628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 31+ | 10.29 грн |
| 44+ | 6.93 грн |
| 100+ | 3.56 грн |
| 500+ | 3.26 грн |
| 1000+ | 2.91 грн |
| 2000+ | 2.62 грн |
| 5000+ | 2.30 грн |
| DMN63D8LW-13 |
|
Виробник: Diodes Incorporated
MOSFETs 30V N-Ch Enh FET 20Vgss 300mA 1.2A
MOSFETs 30V N-Ch Enh FET 20Vgss 300mA 1.2A
на замовлення 56452 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 19+ | 17.56 грн |
| 33+ | 9.87 грн |
| 100+ | 4.08 грн |
| 1000+ | 2.53 грн |
| 2500+ | 2.11 грн |
| 10000+ | 1.62 грн |
| 20000+ | 1.55 грн |