DMN65D7LFR4-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V X2-DFN1010, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: X2-DFN1010-4 (Type B), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 40mA, 10V, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XDFN Exposed Pad, Packaging: Tape & Reel (TR).