DMN65D8L-7-W

DMN65D8L-7-W Diodes Incorporated


DMN65D8L.pdf Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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Технічний опис DMN65D8L-7-W Diodes Incorporated

Description: MOSFET N-CH 60V 310MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V.

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DMN65D8L-7-W DMN65D8L-7-W Виробник : Diodes Incorporated DMN65D8L.pdf Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
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DMN65D8L-7-W Виробник : Diodes Incorporated DMN65D8L.pdf MOSFETs 2N7002 Family SOT23 T&R 3K
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