DMN65D8LDWQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.18A SOT363, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 2V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V, Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 180mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 300mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).