DMN65D8LDWQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 0.18A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 5.56 грн |
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Технічний опис DMN65D8LDWQ-7 Diodes Incorporated
Description: DIODES INC. - DMN65D8LDWQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 180 mA, 180 mA, 8 ohm, tariffCode: 85411000, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 180mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 180mA, Drain-Source-Durchgangswiderstand, p-Kanal: 8ohm, Verlustleistung, p-Kanal: 400mW, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: SOT-363, Anzahl der Pins: 6Pin(s), Produktpalette: PW Series, Drain-Source-Durchgangswiderstand, n-Kanal: 8ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 400mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (14-Jun-2023).
Інші пропозиції DMN65D8LDWQ-7 за ціною від 3.34 грн до 37.52 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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DMN65D8LDWQ-7 | Виробник : DIODES INC. |
Description: DIODES INC. - DMN65D8LDWQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 180 mA, 180 mA, 8 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 180mA Drain-Source-Durchgangswiderstand, p-Kanal: 8ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 8ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMN65D8LDWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.18A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5029 шт: термін постачання 21-31 дні (днів) |
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DMN65D8LDWQ-7 | Виробник : Diodes Incorporated | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd |
на замовлення 14124 шт: термін постачання 21-30 дні (днів) |
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DMN65D8LDWQ-7 | Виробник : DIODES INC. |
Description: DIODES INC. - DMN65D8LDWQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 180 mA, 180 mA, 8 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 180mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 180mA Drain-Source-Durchgangswiderstand, p-Kanal: 8ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-363 Anzahl der Pins: 6Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 8ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DMN65D8LDWQ-7 | Виробник : Diodes Inc | Dual N-Channel Enhancement Mode MOSFET |
товар відсутній |
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DMN65D8LDWQ-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 10 шт |
товар відсутній |
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DMN65D8LDWQ-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 400mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Pulsed drain current: 0.8A Power dissipation: 0.4W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 8Ω Mounting: SMD Gate charge: 870pC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |