DMN65D8LV-7 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V SOT563 T&R, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).