DMNH10H028SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 40.89 грн |
| 5000+ | 37.50 грн |
| 12500+ | 36.80 грн |
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Технічний опис DMNH10H028SK3-13 Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252, Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3.3V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції DMNH10H028SK3-13 за ціною від 32.98 грн до 146.37 грн
| Фото | Назва | Виробник | Інформація |
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DMNH10H028SK3-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 100Vds 20Vgs 125W |
на замовлення 2465 шт: термін постачання 21-30 дні (днів) |
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DMNH10H028SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 100V 55A TO252 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3.3V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel |
на замовлення 195000 шт: термін постачання 21-31 дні (днів) |
|
| DMNH10H028SK3-13 |
|
Виробник: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 100Vds 20Vgs 125W
MOSFETs N-Ch Enh Mode FET 100Vds 20Vgs 125W
на замовлення 2465 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 128.81 грн |
| 10+ | 89.77 грн |
| 100+ | 53.87 грн |
| 500+ | 45.64 грн |
| 1000+ | 38.19 грн |
| 2500+ | 33.12 грн |
| 5000+ | 32.98 грн |
| DMNH10H028SK3-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
на замовлення 195000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.37 грн |