DMNH4006SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 110A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3+ | 134.13 грн |
| 10+ | 82.63 грн |
| 100+ | 55.81 грн |
| 500+ | 41.60 грн |
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Технічний опис DMNH4006SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 40V 110A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMNH4006SPSQ-13
| Фото | Назва | Виробник | Інформація |
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DMNH4006SPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 40V 110A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 50A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| DMNH4006SPSQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V-40V |
товару немає в наявності |
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| DMNH4006SPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 440A; 3W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 50.9nC On-state resistance: 7mΩ Power dissipation: 3W Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 440A Kind of channel: enhancement |
товару немає в наявності |