DMNH6022SSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 2500+ | 31.40 грн |
| 5000+ | 28.80 грн |
| 12500+ | 27.47 грн |
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Технічний опис DMNH6022SSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A, Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMNH6022SSDQ-13 за ціною від 27.36 грн до 79.50 грн
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DMNH6022SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 22559 шт: термін постачання 21-31 дні (днів) |
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DMNH6022SSDQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 4779 шт: термін постачання 21-30 дні (днів) |
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| DMNH6022SSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 22559 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.95 грн |
| 10+ | 59.81 грн |
| 100+ | 46.52 грн |
| 500+ | 37.01 грн |
| 1000+ | 30.15 грн |
| DMNH6022SSDQ-13 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
на замовлення 4779 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.50 грн |
| 10+ | 63.97 грн |
| 100+ | 39.45 грн |
| 500+ | 31.72 грн |
| 1000+ | 29.26 грн |
| 2500+ | 27.36 грн |