DMNH6042SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5+ | 77.65 грн |
| 10+ | 46.76 грн |
| 100+ | 30.73 грн |
| 500+ | 22.36 грн |
| 1000+ | 20.27 грн |
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Технічний опис DMNH6042SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Power Dissipation (Max): 2.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції DMNH6042SPSQ-13
| Фото | Назва | Виробник | Інформація |
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DMNH6042SPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Power Dissipation (Max): 2.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMNH6042SPSQ-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
товару немає в наявності |
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| DMNH6042SPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 35A; 2.9W Mounting: SMD Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 8.8nC On-state resistance: 65mΩ Power dissipation: 2.9W Drain current: 17A Gate-source voltage: ±20V Pulsed drain current: 35A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |