DMNH6042SPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
| Кількість | Ціна |
|---|---|
| 5+ | 78.33 грн |
| 10+ | 47.16 грн |
| 100+ | 31.00 грн |
| 500+ | 22.55 грн |
| 1000+ | 20.45 грн |
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Технічний опис DMNH6042SPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.9W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMNH6042SPSQ-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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DMNH6042SPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 24A PWRDI5060-8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.9W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMNH6042SPSQ-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMNH6042SPSQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 35A; 2.9W Mounting: SMD Case: PowerDI5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 8.8nC On-state resistance: 65mΩ Power dissipation: 2.9W Drain current: 17A Gate-source voltage: ±20V Pulsed drain current: 35A Drain-source voltage: 60V Kind of package: 13 inch reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| DMNH6042SPSQ-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 24A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.9W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMNH6042SPSQ-13 |
|
Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 41V-60V
MOSFET MOSFET BVDSS: 41V-60V
товару немає в наявності
В кошику
од. на суму грн.
| DMNH6042SPSQ-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 35A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.8nC
On-state resistance: 65mΩ
Power dissipation: 2.9W
Drain current: 17A
Gate-source voltage: ±20V
Pulsed drain current: 35A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 35A; 2.9W
Mounting: SMD
Case: PowerDI5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 8.8nC
On-state resistance: 65mΩ
Power dissipation: 2.9W
Drain current: 17A
Gate-source voltage: ±20V
Pulsed drain current: 35A
Drain-source voltage: 60V
Kind of package: 13 inch reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.