DMNH6065SSDQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 60V 3.8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 1.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V.