DMP1007UCB9-7 Diodes Incorporated

Description: MOSFET P-CH 8V 13.2A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9 (Type C), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V.