DMP1008UCB9-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
| Кількість | Ціна |
|---|---|
| 3000+ | 19.58 грн |
| 6000+ | 17.44 грн |
| 9000+ | 16.72 грн |
| 15000+ | 15.54 грн |
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Технічний опис DMP1008UCB9-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V.
Інші пропозиції DMP1008UCB9-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMP1008UCB9-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V U-WLB1515-9 T&R 3K |
товару немає в наявності |