Технічний опис DMP1011LFV-13 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W, On-state resistance: 18.6mΩ, Power dissipation: 2.16W, Gate-source voltage: ±6V, Kind of package: 13 inch reel; tape, Kind of channel: enhancement, Type of transistor: P-MOSFET, Case: PowerDI3333-8, Mounting: SMD, Polarisation: unipolar, Pulsed drain current: -70A, Drain current: -10A, Drain-source voltage: -12V, Gate charge: 9.5nC.
Інші пропозиції DMP1011LFV-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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DMP1011LFV-13 | Виробник : Diodes Incorporated |
 MOSFETs MOSFETBVDSS: 8V-24V |
товару немає в наявності |
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| DMP1011LFV-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W On-state resistance: 18.6mΩ Power dissipation: 2.16W Gate-source voltage: ±6V Kind of package: 13 inch reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 Mounting: SMD Polarisation: unipolar Pulsed drain current: -70A Drain current: -10A Drain-source voltage: -12V Gate charge: 9.5nC |
товару немає в наявності |