DMP1011UCB9-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
| Кількість | Ціна |
|---|---|
| 3000+ | 23.35 грн |
| 6000+ | 20.82 грн |
| 9000+ | 19.97 грн |
| 15000+ | 17.84 грн |
| 21000+ | 17.31 грн |
| 30000+ | 16.96 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP1011UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V, Power Dissipation (Max): 890mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V.
Інші пропозиції DMP1011UCB9-7 за ціною від 19.06 грн до 91.07 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMP1011UCB9-7 | Diodes Incorporated |
Description: MOSFET P-CH 8V 10A U-WLB1515-9 Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V Power Dissipation (Max): 890mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V |
на замовлення 452953 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
DMP1011UCB9-7 | Diodes Incorporated |
MOSFETs P-Ch Enh Mode FET |
на замовлення 5686 шт: термін постачання 21-30 дні (днів) |
|
| DMP1011UCB9-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
на замовлення 452953 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 90.98 грн |
| 10+ | 55.31 грн |
| 100+ | 36.51 грн |
| 500+ | 26.66 грн |
| 1000+ | 24.21 грн |
| DMP1011UCB9-7 |
|
Виробник: Diodes Incorporated
MOSFETs P-Ch Enh Mode FET
MOSFETs P-Ch Enh Mode FET
на замовлення 5686 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.07 грн |
| 10+ | 51.76 грн |
| 100+ | 33.62 грн |
| 500+ | 26.16 грн |
| 1000+ | 23.77 грн |
| 3000+ | 19.06 грн |