DMP1022UFDEQ-7

DMP1022UFDEQ-7 Diodes Incorporated


DMP1022UFDEQ.pdf Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
на замовлення 705 шт:

термін постачання 21-31 дні (днів)
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Технічний опис DMP1022UFDEQ-7 Diodes Incorporated

Description: MOSFET P-CH 12V 9.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V, Qualification: AEC-Q101.

Інші пропозиції DMP1022UFDEQ-7

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DMP1022UFDEQ-7 Виробник : Diodes Inc dmp1022ufdeq.pdf Trans MOSFET P-CH 12V 9.1A Automotive 6-Pin UDFN EP T/R
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DMP1022UFDEQ-7 DMP1022UFDEQ-7 Виробник : Diodes Incorporated DMP1022UFDEQ.pdf Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
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DMP1022UFDEQ-7 DMP1022UFDEQ-7 Виробник : Diodes Incorporated DMP1022UFDEQ.pdf MOSFETs 12V P-CH MOSFET
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DMP1022UFDEQ-7 Виробник : DIODES INCORPORATED DMP1022UFDEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -9A; Idm: -90A; 1.3W
Mounting: SMD
Pulsed drain current: -90A
Drain-source voltage: -12V
Drain current: -9A
Gate charge: 42.6nC
On-state resistance: 0.16Ω
Power dissipation: 1.3W
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: U-DFN2020-6
Polarisation: unipolar
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