DMP1055UFDB-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 12.99 грн |
| 6000+ | 11.59 грн |
| 9000+ | 11.15 грн |
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Технічний опис DMP1055UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V, Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP1055UFDB-7 за ціною від 12.24 грн до 69.17 грн
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DMP1055UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.36W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.9A Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMP1055UFDB-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
на замовлення 4160 шт: термін постачання 21-30 дні (днів) |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 11+ | 29.18 грн |
| 100+ | 19.94 грн |
| 500+ | 14.74 грн |
| 1000+ | 13.43 грн |
| DMP1055UFDB-7 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
на замовлення 4160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 69.17 грн |
| 10+ | 39.95 грн |
| 100+ | 23.98 грн |
| 500+ | 18.43 грн |
| 1000+ | 16.74 грн |
| 3000+ | 12.94 грн |
| 9000+ | 12.24 грн |