| Кількість | Ціна |
|---|---|
| 6+ | 60.80 грн |
| 10+ | 53.13 грн |
| 100+ | 35.44 грн |
| 500+ | 27.99 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP1081UCB4-7 Diodes Incorporated
Description: MOSFET P-CH 12V 3A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V, Power Dissipation (Max): 820mW (Ta), Vgs(th) (Max) @ Id: 650mV @ 250µA, Supplier Device Package: U-WLB1010-4, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V.
Інші пропозиції DMP1081UCB4-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
DMP1081UCB4-7 | Diodes Incorporated |
 Description: MOSFET P-CH 12V 3A U-WLB1010-4Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
DMP1081UCB4-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 3A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP1081UCB4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 3A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 650mV @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V
Description: MOSFET P-CH 12V 3A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 650mV @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| DMP1081UCB4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 3A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 650mV @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V
Description: MOSFET P-CH 12V 3A U-WLB1010-4
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V
Power Dissipation (Max): 820mW (Ta)
Vgs(th) (Max) @ Id: 650mV @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.