DMP10H4D2S-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 3000+ | 5.39 грн |
| 6000+ | 4.70 грн |
| 9000+ | 4.44 грн |
| 15000+ | 3.90 грн |
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Технічний опис DMP10H4D2S-7 Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V, Power Dissipation (Max): 380mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V.
Інші пропозиції DMP10H4D2S-7 за ціною від 4.08 грн до 28.96 грн
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DMP10H4D2S-7 | Diodes Incorporated |
Description: MOSFET P-CH 100V 270MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V |
на замовлення 17889 шт: термін постачання 21-31 дні (днів) |
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DMP10H4D2S-7 | Diodes Incorporated |
MOSFETs P-Ch Enh Mode FET 100V 20Vgss 87pF |
на замовлення 51223 шт: термін постачання 21-30 дні (днів) |
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| DMP10H4D2S-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
на замовлення 17889 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 20+ | 15.31 грн |
| 100+ | 9.64 грн |
| 500+ | 6.73 грн |
| 1000+ | 5.98 грн |
| DMP10H4D2S-7 |
|
Виробник: Diodes Incorporated
MOSFETs P-Ch Enh Mode FET 100V 20Vgss 87pF
MOSFETs P-Ch Enh Mode FET 100V 20Vgss 87pF
на замовлення 51223 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 28.96 грн |
| 16+ | 21.35 грн |
| 100+ | 10.55 грн |
| 500+ | 7.10 грн |
| 1000+ | 5.42 грн |
| 3000+ | 4.78 грн |
| 6000+ | 4.08 грн |