| Кількість | Ціна |
|---|---|
| 4+ | 89.43 грн |
| 10+ | 55.40 грн |
| 100+ | 31.79 грн |
| 500+ | 24.75 грн |
| 1000+ | 22.93 грн |
| 3000+ | 22.15 грн |
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Технічний опис DMP2005UFG-13 Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 2.2W (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2005UFG-13 за ціною від 24.56 грн до 92.57 грн
| Фото | Назва | Виробник | Інформація |
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DMP2005UFG-13 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 89A POWERDI3333Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1733 шт: термін постачання 21-31 дні (днів) |
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| DMP2005UFG-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 89A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 56.07 грн |
| 100+ | 37.02 грн |
| 500+ | 27.04 грн |
| 1000+ | 24.56 грн |