DMP2006UFGQ-7 Diodes Incorporated

Description: MOSFET P-CH 20V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V, Qualification: AEC-Q101.