DMP2007UFG-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 18A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.42 грн |
| 6000+ | 20.88 грн |
| 9000+ | 20.03 грн |
| 15000+ | 18.76 грн |
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Технічний опис DMP2007UFG-13 Diodes Incorporated
Description: MOSFET P-CH 20V 18A PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 2.3W (Ta), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2007UFG-13 за ціною від 24.28 грн до 91.77 грн
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DMP2007UFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 18A PWRDI3333 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 2.3W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
на замовлення 408994 шт: термін постачання 21-31 дні (днів) |
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| DMP2007UFG-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 18A PWRDI3333
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: MOSFET P-CH 20V 18A PWRDI3333
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
на замовлення 408994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 91.77 грн |
| 10+ | 55.46 грн |
| 100+ | 36.62 грн |
| 500+ | 26.74 грн |
| 1000+ | 24.28 грн |