DMP2008UFG-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 15.67 грн |
| 6000+ | 13.87 грн |
| 9000+ | 13.26 грн |
| 15000+ | 11.79 грн |
| 21000+ | 11.40 грн |
| 30000+ | 11.03 грн |
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Технічний опис DMP2008UFG-13 Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V, Power Dissipation (Max): 2.4W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V.
Інші пропозиції DMP2008UFG-13 за ціною від 12.03 грн до 64.88 грн
| Фото | Назва | Виробник | Інформація |
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DMP2008UFG-13 | Diodes Incorporated |
MOSFETs 20V P-CH MOSFET |
на замовлення 3132 шт: термін постачання 21-30 дні (днів) |
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DMP2008UFG-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V |
на замовлення 47864 шт: термін постачання 21-31 дні (днів) |
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| DMP2008UFG-13 |
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Виробник: Diodes Incorporated
MOSFETs 20V P-CH MOSFET
MOSFETs 20V P-CH MOSFET
на замовлення 3132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.50 грн |
| 10+ | 38.98 грн |
| 100+ | 22.08 грн |
| 500+ | 16.95 грн |
| 1000+ | 15.33 грн |
| 3000+ | 12.73 грн |
| 6000+ | 12.03 грн |
| DMP2008UFG-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
Description: MOSFET P-CH 20V 14A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V
на замовлення 47864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 38.93 грн |
| 100+ | 25.26 грн |
| 500+ | 18.19 грн |
| 1000+ | 16.42 грн |