DMP2008USS-13 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SO-8 T&R 2., FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @12A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc).