DMP2010UFG-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 12.7A PWRDI3333
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
| Кількість | Ціна |
|---|---|
| 4+ | 86.24 грн |
| 10+ | 51.88 грн |
| 100+ | 34.25 грн |
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Технічний опис DMP2010UFG-7 Diodes Incorporated
Description: MOSFET P-CH 20V 12.7A PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2010UFG-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
DMP2010UFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 12.7A PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
DMP2010UFG-7 | Diodes Incorporated |
MOSFETs 20V P-Ch Enh FET 10Vgss -80A Idm |
товару немає в наявності |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. |
| DMP2010UFG-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 12.7A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 12.7A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| DMP2010UFG-7 |
|
Виробник: Diodes Incorporated
MOSFETs 20V P-Ch Enh FET 10Vgss -80A Idm
MOSFETs 20V P-Ch Enh FET 10Vgss -80A Idm
товару немає в наявності
Мінімальне замовлення: 4 шт
В кошику
од. на суму грн.