DMP2016UFDF-13 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).