DMP2021UFDF-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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Технічний опис DMP2021UFDF-13 Diodes Incorporated
Description: MOSFET P-CH 20V 9A 6UDFN, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: U-DFN2020-6 (Type F), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 730mW (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2021UFDF-13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMP2021UFDF-13 | Diodes Incorporated |
MOSFETs P-Ch -20V Enh FET 8Vgss 0.73W 2760pF |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2021UFDF-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W Mounting: SMD Case: U-DFN2020-6 Kind of package: 13 inch reel; tape Gate charge: 59nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V On-state resistance: 80mΩ Pulsed drain current: -60A Power dissipation: 1.3W |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| DMP2021UFDF-13 |
|
Виробник: Diodes Incorporated
MOSFETs P-Ch -20V Enh FET 8Vgss 0.73W 2760pF
MOSFETs P-Ch -20V Enh FET 8Vgss 0.73W 2760pF
товару немає в наявності
В кошику
од. на суму грн.
| DMP2021UFDF-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.3W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Gate charge: 59nC
Polarisation: unipolar
Drain current: -8.9A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Pulsed drain current: -60A
Power dissipation: 1.3W
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.