DMP2033UVT-13 Diodes Incorporated

Description: MOSFET P-CH 20V 4.2A TSOT-26, Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).