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DMP2037U-7

DMP2037U-7 Diodes Incorporated

DMP2037U-3043217.pdf
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K
на замовлення 2605 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+34.54 грн
16+21.11 грн
100+11.18 грн
500+8.79 грн
1000+7.88 грн
3000+6.40 грн
6000+5.84 грн
Мінімальне замовлення: 10
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Технічний опис DMP2037U-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V, Qualification: AEC-Q101.

Інші пропозиції DMP2037U-7

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DMP2037U-7 DMP2037U-7 Diodes Incorporated DMP2037U.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
Qualification: AEC-Q101
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DMP2037U-7 DMP2037U-7 Diodes Incorporated DMP2037U.pdf Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
Qualification: AEC-Q101
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DMP2037U-7 DMP2037U-7 DIODES INCORPORATED DMP2037U.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
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DMP2037U-7 DMP2037U.pdf
DMP2037U-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMP2037U-7 DMP2037U.pdf
DMP2037U-7
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
DMP2037U-7 DMP2037U.pdf
DMP2037U-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -38A
Drain-source voltage: -20V
Drain current: -4.8A
Gate charge: 14.5nC
On-state resistance: 43mΩ
Power dissipation: 1.6W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
товару немає в наявності
В кошику  од. на суму  грн.