DMP2037U-7 Diodes Incorporated
на замовлення 5286 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 33.56 грн |
| 16+ | 22.34 грн |
| 100+ | 9.71 грн |
| 1000+ | 8.68 грн |
| 3000+ | 6.62 грн |
| 9000+ | 5.37 грн |
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Технічний опис DMP2037U-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMP2037U-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP2037U-7 | Виробник : Diodes Inc |
 MOSFET BVDSS: 8V24V SOT23 T&R 3K |
товару немає в наявності |
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DMP2037U-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 43mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 14.5nC Pulsed drain current: -38A кількість в упаковці: 1 шт |
товару немає в наявності |
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DMP2037U-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMP2037U-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 803 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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DMP2037U-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.8A; Idm: -38A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 43mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 14.5nC Pulsed drain current: -38A |
товару немає в наявності |