DMP2040USS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 2500+ | 10.48 грн |
| 5000+ | 9.19 грн |
| 7500+ | 8.73 грн |
| 12500+ | 7.71 грн |
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Технічний опис DMP2040USS-13 Diodes Incorporated
Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V.
Інші пропозиції DMP2040USS-13 за ціною від 7.03 грн до 45.10 грн
| Фото | Назва | Виробник | Інформація |
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DMP2040USS-13 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K |
на замовлення 7246 шт: термін постачання 21-30 дні (днів) |
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DMP2040USS-13 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -30A Drain-source voltage: -20V Drain current: -5.5A Gate charge: 19nC On-state resistance: 52mΩ Power dissipation: 1.9W Gate-source voltage: ±12V Kind of package: 13 inch reel; tape |
на замовлення 2368 шт: термін постачання 14-30 дні (днів) |
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DMP2040USS-13 | Diodes Incorporated |
Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V |
на замовлення 17651 шт: термін постачання 21-31 дні (днів) |
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| DMP2040USS-13 |
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Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
MOSFET MOSFET BVDSS: 8V~24V SO-8 T&R 2.5K
на замовлення 7246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.59 грн |
| 12+ | 28.23 грн |
| 100+ | 13.64 грн |
| 1000+ | 9.28 грн |
| 2500+ | 7.17 грн |
| 10000+ | 7.10 грн |
| 25000+ | 7.03 грн |
| DMP2040USS-13 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -30A; 1.9W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -30A
Drain-source voltage: -20V
Drain current: -5.5A
Gate charge: 19nC
On-state resistance: 52mΩ
Power dissipation: 1.9W
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
на замовлення 2368 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 19+ | 23.45 грн |
| 50+ | 17.52 грн |
| 100+ | 15.32 грн |
| 500+ | 11.00 грн |
| 1000+ | 9.40 грн |
| DMP2040USS-13 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
Description: MOSFET P-CH 20V 7A/15A 8SO T&R 2
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
на замовлення 17651 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.10 грн |
| 12+ | 26.59 грн |
| 100+ | 17.03 грн |
| 500+ | 12.08 грн |
| 1000+ | 10.83 грн |