DMP2042UCP4-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.37 грн |
| 6000+ | 9.48 грн |
| 9000+ | 8.80 грн |
| 30000+ | 8.07 грн |
| 75000+ | 7.87 грн |
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Технічний опис DMP2042UCP4-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-, Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: X1-DSN1010-4 (Type C), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2042UCP4-7 за ціною від 10.49 грн до 30.86 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMP2042UCP4-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X1-DSN1010-4 (Type C) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Cut Tape (CT) |
на замовлення 230960 шт: термін постачання 21-31 дні (днів) |
|
| DMP2042UCP4-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
на замовлення 230960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.86 грн |
| 13+ | 25.37 грн |
| 100+ | 17.61 грн |
| 500+ | 12.90 грн |
| 1000+ | 10.49 грн |