на замовлення 491 шт:
термін постачання 5 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 68+ | 4.65 грн |
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Технічний опис DMP2045U-7 Diodes
Description: MOSFET P-CH 20V 4.3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V.
Інші пропозиції DMP2045U-7 за ціною від 3.89 грн до 27.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DMP2045U-7 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 4.3A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V |
на замовлення 123000 шт: термін постачання 21-31 дні (днів) |
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DMP2045U-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 0.8W Case: SOT23 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Drain current: -3.1A Kind of channel: enhancement Drain-source voltage: -20V Gate-source voltage: ±8V On-state resistance: 90mΩ |
на замовлення 566 шт: термін постачання 14-30 дні (днів) |
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DMP2045U-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V |
на замовлення 124563 шт: термін постачання 21-31 дні (днів) |
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DMP2045U-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V |
на замовлення 77160 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP2045U-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
на замовлення 123000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.85 грн |
| 6000+ | 5.09 грн |
| 9000+ | 4.81 грн |
| 15000+ | 4.23 грн |
| 21000+ | 4.05 грн |
| 30000+ | 3.89 грн |
| DMP2045U-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Drain current: -3.1A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±8V
On-state resistance: 90mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.1A; 0.8W; SOT23; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 0.8W
Case: SOT23
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Drain current: -3.1A
Kind of channel: enhancement
Drain-source voltage: -20V
Gate-source voltage: ±8V
On-state resistance: 90mΩ
на замовлення 566 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.07 грн |
| 38+ | 11.19 грн |
| 53+ | 7.83 грн |
| 100+ | 6.59 грн |
| 500+ | 4.60 грн |
| DMP2045U-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
Description: MOSFET P-CH 20V 4.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
на замовлення 124563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 19+ | 16.12 грн |
| 100+ | 10.14 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.29 грн |
| DMP2045U-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V 24V
MOSFETs MOSFET BVDSS: 8V 24V
на замовлення 77160 шт:
термін постачання 21-30 дні (днів)