DMP2060UFDB-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 4+ | 92.57 грн |
| 10+ | 55.92 грн |
| 100+ | 36.90 грн |
| 500+ | 26.94 грн |
| 1000+ | 24.47 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP2060UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN, Supplier Device Package: U-DFN2020-6 (Type B), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2060UFDB-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
DMP2060UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.2A 6UDFN Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2060UFDB-7 | Diodes Incorporated |
MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2060UFDB-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Supplier Device Package: U-DFN2020-6 (Type B)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| DMP2060UFDB-7 |
|
Виробник: Diodes Incorporated
MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF
MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF
товару немає в наявності
В кошику
од. на суму грн.