DMP2066LDMQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Qualification: AEC-Q101
на замовлення 5859000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.66 грн |
| 6000+ | 10.27 грн |
| 9000+ | 9.78 грн |
| 15000+ | 8.66 грн |
| 21000+ | 8.36 грн |
| 30000+ | 8.10 грн |
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Технічний опис DMP2066LDMQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції DMP2066LDMQ-7 за ціною від 9.27 грн до 33.56 грн
| Фото | Назва | Виробник | Інформація |
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DMP2066LDMQ-7 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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DMP2066LDMQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A кількість в упаковці: 1 шт |
товару немає в наявності |
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DMP2066LDMQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A |
товару немає в наявності |