| Кількість | Ціна |
|---|---|
| 7+ | 48.24 грн |
| 11+ | 29.51 грн |
| 100+ | 16.45 грн |
| 500+ | 12.62 грн |
| 1000+ | 11.23 грн |
| 3000+ | 9.20 грн |
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Технічний опис DMP2066LDMQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP2066LDMQ-7 за ціною від 7.12 грн до 10.25 грн
| Фото | Назва | Виробник | Інформація |
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| DMP2066LDMQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 402000 шт: термін постачання 21-31 дні (днів) |
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DMP2066LDMQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -3.7A Gate charge: 10.1nC On-state resistance: 70mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement |
товару немає в наявності |