DMP2067LVTQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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Технічний опис DMP2067LVTQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).