DMP2070U-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
на замовлення 828 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
9+ | 36.43 грн |
11+ | 29.90 грн |
100+ | 20.77 грн |
500+ | 15.22 грн |
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Технічний опис DMP2070U-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V.
Інші пропозиції DMP2070U-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMP2070U-7 | Виробник : Diodes Inc |
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товару немає в наявності |
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DMP2070U-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 74mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 17.8nC Pulsed drain current: -20A кількість в упаковці: 1 шт |
товару немає в наявності |
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DMP2070U-7 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V |
товару немає в наявності |
|
![]() |
DMP2070U-7 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 74mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 17.8nC Pulsed drain current: -20A |
товару немає в наявності |