DMP2110UFDBQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Qualification: AEC-Q101, Grade: Automotive, FET Type: P-Channel, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: U-DFN2020-6 (Type B), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Tape & Reel (TR).