DMP2130L-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.37 грн |
| 6000+ | 7.76 грн |
| 9000+ | 7.31 грн |
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Технічний опис DMP2130L-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V.
Інші пропозиції DMP2130L-7 за ціною від 10.13 грн до 39.29 грн
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DMP2130L-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V |
на замовлення 9480 шт: термін постачання 21-31 дні (днів) |
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DMP2130L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.125Ω Power dissipation: 1.4W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
на замовлення 997 шт: термін постачання 14-30 дні (днів) |
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DMP2130L-7 | Diodes Incorporated |
MOSFETs P-Channel 1.4W |
на замовлення 1275 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP2130L-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
на замовлення 9480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.65 грн |
| 13+ | 23.36 грн |
| 100+ | 12.42 грн |
| 500+ | 10.84 грн |
| 1000+ | 10.13 грн |
| DMP2130L-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
на замовлення 997 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.29 грн |
| 16+ | 26.78 грн |
| 100+ | 15.92 грн |
| 500+ | 11.36 грн |
| DMP2130L-7 |
|
Виробник: Diodes Incorporated
MOSFETs P-Channel 1.4W
MOSFETs P-Channel 1.4W
на замовлення 1275 шт:
термін постачання 21-30 дні (днів)