DMP2160UFDB-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 231000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.62 грн |
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Технічний опис DMP2160UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Інші пропозиції DMP2160UFDB-7 за ціною від 7.79 грн до 21.33 грн
| Фото | Назва | Виробник | Інформація |
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DMP2160UFDB-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 233324 шт: термін постачання 21-31 дні (днів) |
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DMP2160UFDB-7 Код товару: 178275 |
Мікросхеми > Драйвери транзисторів |
товар відсутній
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| DMP2160UFDB-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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DMP2160UFDB-7 | Виробник : Diodes Incorporated |
MOSFET 20V 3.8A DUAL P-CHAN |
товар відсутній |
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| DMP2160UFDB-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -13A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -13A Power dissipation: 1.4W Case: U-DFN2020-6 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |