DMP2160UFDBQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.68 грн |
| 6000+ | 11.59 грн |
| 9000+ | 10.76 грн |
| 30000+ | 9.91 грн |
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Технічний опис DMP2160UFDBQ-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V, Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).
Інші пропозиції DMP2160UFDBQ-7 за ціною від 12.82 грн до 37.97 грн
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DMP2160UFDBQ-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) |
на замовлення 229406 шт: термін постачання 21-31 дні (днів) |
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DMP2160UFDBQ-7 | Diodes Incorporated |
MOSFETs Dual P-Ch Enh FET VDSS -20V -12VGSS |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| DMP2160UFDBQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Description: MOSFET 2P-CH 20V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
на замовлення 229406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.97 грн |
| 10+ | 30.97 грн |
| 100+ | 21.51 грн |
| 500+ | 15.77 грн |
| 1000+ | 12.82 грн |
| DMP2160UFDBQ-7 |
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Виробник: Diodes Incorporated
MOSFETs Dual P-Ch Enh FET VDSS -20V -12VGSS
MOSFETs Dual P-Ch Enh FET VDSS -20V -12VGSS
на замовлення 284 шт:
термін постачання 21-30 дні (днів)