DMP21D0UFB-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 10000+ | 4.93 грн |
| 20000+ | 4.35 грн |
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Технічний опис DMP21D0UFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Ta), Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMP21D0UFB-7B за ціною від 4.96 грн до 28.24 грн
| Фото | Назва | Виробник | Інформація |
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DMP21D0UFB-7B | Виробник : Diodes Incorporated |
MOSFET 20V P-Ch Enh FET Pd .43W -8Vgss -5.0A |
на замовлення 14893 шт: термін постачання 21-30 дні (днів) |
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DMP21D0UFB-7B | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 770mA (Ta) Rds On (Max) @ Id, Vgs: 495mOhm @ 400mA, 4.5V Power Dissipation (Max): 430mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 76.5 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 25101 шт: термін постачання 21-31 дні (днів) |
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