DMP21D2UFA-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 330MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 10000+ | 3.92 грн |
| 20000+ | 3.45 грн |
| 30000+ | 3.28 грн |
| 50000+ | 2.90 грн |
| 70000+ | 2.80 грн |
| 100000+ | 2.69 грн |
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Технічний опис DMP21D2UFA-7B Diodes Incorporated
Description: MOSFET P-CH 20V 330MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 15 V.
Інші пропозиції DMP21D2UFA-7B за ціною від 3.16 грн до 23.96 грн
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DMP21D2UFA-7B | Diodes Incorporated |
Description: MOSFET P-CH 20V 330MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 15 V |
на замовлення 302588 шт: термін постачання 21-31 дні (днів) |
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DMP21D2UFA-7B | Diodes Incorporated |
MOSFETs 20V P-Ch Enh FET 20VDS 8VGS 49pF |
на замовлення 12079 шт: термін постачання 21-30 дні (днів) |
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| DMP21D2UFA-7B |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 20V 330MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 15 V
Description: MOSFET P-CH 20V 330MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 15 V
на замовлення 302588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 23+ | 13.41 грн |
| 100+ | 8.44 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.20 грн |
| 2000+ | 4.64 грн |
| 5000+ | 3.96 грн |
| DMP21D2UFA-7B |
|
Виробник: Diodes Incorporated
MOSFETs 20V P-Ch Enh FET 20VDS 8VGS 49pF
MOSFETs 20V P-Ch Enh FET 20VDS 8VGS 49pF
на замовлення 12079 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.96 грн |
| 23+ | 14.23 грн |
| 100+ | 7.81 грн |
| 500+ | 5.84 грн |
| 1000+ | 4.57 грн |
| 5000+ | 4.01 грн |
| 10000+ | 3.16 грн |