DMP2200UFCL-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 8.29 грн |
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Технічний опис DMP2200UFCL-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.7A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 660mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.7A, Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V, Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: U-DFN1616-6 (Type F), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP2200UFCL-7 за ціною від 8.30 грн до 56.45 грн
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DMP2200UFCL-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 1.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.7A Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-DFN1616-6 (Type F) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3013 шт: термін постачання 21-31 дні (днів) |
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DMP2200UFCL-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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| DMP2200UFCL-7 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 20V 1.7A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 660mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Input Capacitance (Ciss) (Max) @ Vds: 184pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-DFN1616-6 (Type F)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3013 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.98 грн |
| 14+ | 22.55 грн |
| 100+ | 14.36 грн |
| 500+ | 10.16 грн |
| 1000+ | 9.09 грн |
| DMP2200UFCL-7 |
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Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K
MOSFETs MOSFET BVDSS: 8V~24V U-DFN1616-6 T&R 3K
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.45 грн |
| 10+ | 36.96 грн |
| 100+ | 20.39 грн |
| 500+ | 13.50 грн |
| 1000+ | 10.69 грн |
| 3000+ | 8.30 грн |