Технічний опис DMP2305UQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 1.4W, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2305UQ-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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DMP2305UQ-7 | Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.4W Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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DMP2305UQ-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMP2305UQ-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23 Polarisation: unipolar Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 113mΩ Mounting: SMD Pulsed drain current: -10A Power dissipation: 1.4W Gate charge: 7.6nC |
товару немає в наявності |
В кошику од. на суму грн. |
 |
DMP2305UQ-7 | Diodes Zetex |
Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| DMP2305UQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.4W
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.4W
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DMP2305UQ-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMP2305UQ-7 |
|
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.4W
Gate charge: 7.6nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.4W; SOT23
Polarisation: unipolar
Drain current: -3.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: 7 inch reel; tape
Case: SOT23
On-state resistance: 113mΩ
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.4W
Gate charge: 7.6nC
товару немає в наявності
В кошику
од. на суму грн.
| DMP2305UQ-7 |
|
Виробник: Diodes Zetex
Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.2A Automotive AEC-Q101 3-Pin SOT-23 T/R
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.