DMP2541UCB9-7 Diodes Incorporated
| Кількість | Ціна |
|---|---|
| 8+ | 46.03 грн |
| 10+ | 39.30 грн |
| 100+ | 25.60 грн |
| 500+ | 20.11 грн |
Відгуки про товар
Написати відгук
Технічний опис DMP2541UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 25V 3.9A U-WLB1515-9, Mounting Type: Surface Mount, Package / Case: 9-UFBGA, WLBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: U-WLB1515-9, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 940mW (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 155°C (TJ).
Інші пропозиції DMP2541UCB9-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP2541UCB9-7 | Diodes Incorporated |
Description: MOSFET P-CH 25V 3.9A U-WLB1515-9 Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: U-WLB1515-9 Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2541UCB9-7 |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 25V 3.9A U-WLB1515-9
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: U-WLB1515-9
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Description: MOSFET P-CH 25V 3.9A U-WLB1515-9
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: U-WLB1515-9
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.