DMP25H18DLFDE-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
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Технічний опис DMP25H18DLFDE-7 Diodes Incorporated
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 250V, rohsCompliant: YES, Dauer-Drainstrom Id: 260mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 1.7V, Verlustleistung: 1.4W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: U-DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 10ohm.
Інші пропозиції DMP25H18DLFDE-7 за ціною від 38.87 грн до 134.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DMP25H18DLFDE-7 | Diodes Incorporated |
Description: MOSFET P-CH 250V 260MA 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs (Max): ±40V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V |
на замовлення 150271 шт: термін постачання 21-31 дні (днів) |
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DMP25H18DLFDE-7 | DIODES INC. |
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 10ohm |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMP25H18DLFDE-7 | Diodes Incorporated |
MOSFETs 250V P-Ch Enh FET 40Vgss 81pF 2.8nC |
на замовлення 2046 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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DMP25H18DLFDE-7 | DIODES INC. |
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 10ohm |
на замовлення 803 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| DMP25H18DLFDE-7 |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
Description: MOSFET P-CH 250V 260MA 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: U-DFN2020-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±40V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 25 V
на замовлення 150271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.06 грн |
| 10+ | 82.23 грн |
| 100+ | 55.55 грн |
| 500+ | 41.40 грн |
| 1000+ | 38.87 грн |
| DMP25H18DLFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 260mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 1.4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 10ohm
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 260mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 1.4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 10ohm
на замовлення 803 шт:
термін постачання 21-31 дні (днів)
| DMP25H18DLFDE-7 |
|
Виробник: Diodes Incorporated
MOSFETs 250V P-Ch Enh FET 40Vgss 81pF 2.8nC
MOSFETs 250V P-Ch Enh FET 40Vgss 81pF 2.8nC
на замовлення 2046 шт:
термін постачання 21-30 дні (днів)
| DMP25H18DLFDE-7 |
|
Виробник: DIODES INC.
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 260mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 1.4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 10ohm
Description: DIODES INC. - DMP25H18DLFDE-7 - Leistungs-MOSFET, p-Kanal, 250 V, 260 mA, 10 ohm, U-DFN2020, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 260mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 1.4W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: U-DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 10ohm
на замовлення 803 шт:
термін постачання 21-31 дні (днів)