Технічний опис DMP26M1UFG-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W, Case: PowerDI3333-8, Drain-source voltage: -20V, Drain current: -56A, On-state resistance: 17mΩ, Type of transistor: P-MOSFET, Power dissipation: 3W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 164nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: -110A, Mounting: SMD, кількість в упаковці: 3000 шт.
Інші пропозиції DMP26M1UFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| DMP26M1UFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 164nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -110A Mounting: SMD кількість в упаковці: 3000 шт |
товару немає в наявності |
||
| DMP26M1UFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -56A On-state resistance: 17mΩ Type of transistor: P-MOSFET Power dissipation: 3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 164nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -110A Mounting: SMD |
товару немає в наявності |