DMP2900UFB-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 10000+ | 2.83 грн |
| 20000+ | 2.47 грн |
| 30000+ | 2.34 грн |
| 50000+ | 2.06 грн |
| 70000+ | 1.98 грн |
| 100000+ | 1.91 грн |
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Технічний опис DMP2900UFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 990mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції DMP2900UFB-7B за ціною від 2.39 грн до 23.63 грн
| Фото | Назва | Виробник | Інформація |
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DMP2900UFB-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V |
на замовлення 108507 шт: термін постачання 21-31 дні (днів) |
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| DMP2900UFB-7B | Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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| DMP2900UFB-7B |
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Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
на замовлення 108507 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.41 грн |
| 31+ | 10.13 грн |
| 100+ | 6.29 грн |
| 500+ | 4.33 грн |
| 1000+ | 3.82 грн |
| 2000+ | 3.39 грн |
| 5000+ | 2.88 грн |
| DMP2900UFB-7B |
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Виробник: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.63 грн |
| 21+ | 15.77 грн |
| 100+ | 8.72 грн |
| 1000+ | 3.94 грн |
| 2500+ | 3.38 грн |
| 10000+ | 2.53 грн |
| 20000+ | 2.39 грн |