Технічний опис DMP2900UV-7 Diodes Incorporated
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW, Drain current: -680mA, Gate charge: 0.7nC, Power dissipation: 0.8W, Gate-source voltage: ±6V, Kind of package: 7 inch reel; tape, On-state resistance: 25Ω, Kind of channel: enhancement, Type of transistor: P-MOSFET x2, Mounting: SMD, Case: SOT563, Polarisation: unipolar, Drain-source voltage: -20V, Pulsed drain current: -2.5A.
Інші пропозиції DMP2900UV-7
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
DMP2900UV-7 | Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 8V~24V SOT563 T&R 3K |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2900UV-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Drain current: -680mA Gate charge: 0.7nC Power dissipation: 0.8W Gate-source voltage: ±6V Kind of package: 7 inch reel; tape On-state resistance: 25Ω Kind of channel: enhancement Type of transistor: P-MOSFET x2 Mounting: SMD Case: SOT563 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.5A |
товару немає в наявності |
В кошику од. на суму грн. |
| DMP2900UV-7 |
|
Виробник: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V SOT563 T&R 3K
MOSFETs MOSFET BVDSS: 8V~24V SOT563 T&R 3K
товару немає в наявності
В кошику
од. на суму грн.
| DMP2900UV-7 |
|
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW
Drain current: -680mA
Gate charge: 0.7nC
Power dissipation: 0.8W
Gate-source voltage: ±6V
Kind of package: 7 inch reel; tape
On-state resistance: 25Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.5A
товару немає в наявності
В кошику
од. на суму грн.