DMP3004SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V
на замовлення 180000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 37.32 грн |
5000+ | 34.22 грн |
12500+ | 32.64 грн |
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Технічний опис DMP3004SSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V.
Інші пропозиції DMP3004SSS-13 за ціною від 35.82 грн до 90.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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DMP3004SSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 16.2A 8SO T&R 2 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V |
на замовлення 180000 шт: термін постачання 21-31 дні (днів) |
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DMP3004SSS-13 | Виробник : Diodes Inc | Trans MOSFET P-CH 30V 16.2A 8-Pin SO T/R |
товар відсутній |
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DMP3004SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8 Mounting: SMD Polarisation: unipolar Drain current: -18.7A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 6.5mΩ Pulsed drain current: -110A Power dissipation: 1.6W Gate charge: 156nC кількість в упаковці: 2500 шт |
товар відсутній |
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DMP3004SSS-13 | Виробник : Diodes Incorporated | MOSFET 30V P-CH MOSFET |
товар відсутній |
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DMP3004SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -18.7A; Idm: -110A; 1.6W; SO8 Mounting: SMD Polarisation: unipolar Drain current: -18.7A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 6.5mΩ Pulsed drain current: -110A Power dissipation: 1.6W Gate charge: 156nC |
товар відсутній |